Co:BaTiO <sub>3</sub> /Sn:BaTiO <sub>3</sub> Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength
نویسندگان
چکیده
Ferroelectric (FE) capacitors exhibiting ultrahigh power densities are widely utilized as electrostatic energy storage devices in pulsed electronic devices. One approach to maximize the discharge density (Ud) of is increase breakdown strength (Eb) accompanied with high maximum polarization (Pm) while suppressing loss. However, inverse relationship between Eb and Pm challenges simultaneous enhancement Ud. To overcome this limitation, FE/relaxor FE (RFE) heterostructure composed Co-doped BaTiO3 (BTCO) Sn-doped (BTS) epitaxial thin film layers decouple values fabricated Ud up 7.9 MV cm−1 117 J cm−3, respectively achieved. The can be attributed suppression leakage current at BTCO/BTS interface, a narrower hysteresis loop contributed by BTS, from BTCO layer. Additionally, exhibit excellent fatigue endurance 108 cycles thermal stable even 160 °C. Through properly designing RFE layers, thermally reliable FE/RFE realized.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2023
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202201141